| Modulname |
ExceleRAM EBW50320603038CD |
| Seriennummer |
37320000h (12855) |
| Herstellungsdatum |
Woche 20 / 2025 |
| Modulgröße |
16 GB (32 banks) |
| Modulart |
Unbuffered DIMM |
| Speicherart |
DDR5 SDRAM |
| Speichergeschwindigkeit (EXPO) |
DDR5-6000 (3000 MHz) |
| Speichergeschwindigkeit |
DDR5-4800 (2400 MHz) |
| Modulbreite |
64 bit |
| Modulspannung (EXPO) |
1.40 V |
| Modulspannung (VDD) |
1.1 V |
| Modulspannung (VDDQ) |
1.1 V |
| Modulspannung (VPP) |
1.8 V |
| Fehlerkorrekturmethode |
Keine |
| DRAM Hersteller |
SK hynix |
| DRAM Stepping |
00h |
| SDRAM Die Count |
1 |
| Supported CAS Latencies |
42, 40, 36, 32, 30, 28, 22 |
| Speicher Timings: |
| @ 3000 MHz (EXPO) |
30-38-38-86 (CL-RCD-RP-RAS) / 145-884-480-390-90 (RC-RFC1-RFC2-RFCSB-WR) |
| @ 2400 MHz |
42-40-40-77 (CL-RCD-RP-RAS) / 117-708-384-312-72 (RC-RFC1-RFC2-RFCSB-WR) |
| @ 2400 MHz |
40-40-40-77 (CL-RCD-RP-RAS) / 117-706-383-312-72 (RC-RFC1-RFC2-RFCSB-WR) |
| @ 2167 MHz |
36-36-36-69 (CL-RCD-RP-RAS) / 105-636-345-280-65 (RC-RFC1-RFC2-RFCSB-WR) |
| @ 1933 MHz |
32-32-32-62 (CL-RCD-RP-RAS) / 94-565-307-249-58 (RC-RFC1-RFC2-RFCSB-WR) |
| @ 1800 MHz |
30-30-30-58 (CL-RCD-RP-RAS) / 88-530-288-234-54 (RC-RFC1-RFC2-RFCSB-WR) |
| @ 1667 MHz |
28-28-28-54 (CL-RCD-RP-RAS) / 82-495-269-218-51 (RC-RFC1-RFC2-RFCSB-WR) |
| @ 1333 MHz |
22-22-22-43 (CL-RCD-RP-RAS) / 65-389-211-172-40 (RC-RFC1-RFC2-RFCSB-WR) |
| Extreme Memory Profile v3.0: |
| Profil Name |
Profile 1 |
| Speichergeschwindigkeit |
DDR5-6000 (3000 MHz) |
| Spannung (VDD) |
1.40 V |
| Spannung (VDDQ) |
1.40 V |
| Spannung (VPP) |
1.80 V |
| Spannung (Speichercontroller) |
1.20 V |
| Empfohlene DIMMs pro Kanal |
1 |
| Supported CAS Latencies |
30 |
| Dynamic Memory Boost |
Unterstützt |
| Real-Time Memory Frequency Overclocking |
Unterstützt |
| @ 3000 MHz |
30-38-38-86 (CL-RCD-RP-RAS) / 145-884-480-390-90 (RC-RFC1-RFC2-RFCSB-WR) |
| EXtended Profiles for Overclocking v1.0: |
| Speichergeschwindigkeit |
DDR5-6000 (3000 MHz) |
| Spannung (VDD) |
1.40 V |
| Spannung (VDDQ) |
1.40 V |
| Spannung (VPP) |
1.80 V |
| Empfohlene DIMMs pro Kanal |
1 |
| Speicher Timings |
30-38-38-86 (CL-RCD-RP-RAS) / 145-884-480-390-90 (RC-RFC1-RFC2-RFCSB-WR) |
| CAS To CAS Delay (tCCD) |
Same Bank Group: 15T |
| RAS To RAS Delay (tRRD) |
Same Bank Group: 15T |
| Write To Read Delay (tWTR) |
Same Bank Group: 30T, Diff. Bank Group: 7T |
| Read To Precharge Delay (tRTP) |
22T |
| Four Activate Window Delay (tFAW) |
43T |
| Write CAS To CAS Delay (tCCDW) |
Same Bank Group: 60T |
| Speichermodulbesonderheiten: |
| Asymmetrical Module |
Nein |
| HeatSpreader |
Vorhanden |
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