Walton Chaintech: Cool It Smart

Pressemitteilung von Walton Chaintech

Walton Chaintech Releases Heatsink Design Cool It Smart For APOGEE GT DDR3 1800 Memory Module

Taipei, Taiwan, November 27, 2007－The overclocking memory module specialist, Walton Chaintech, proudly announced today the Cool It Smart （pat. pending）: the absolute Heatsink System that can add almost 50 percent of cooling efficiency. Comes in the deluxe package of APOGEE GT DDR3 1800MHz memory module, the unique heatsink block design implements the best “Structural Stability” in the market, for the system itself is well-balanced and positioned with 4 screws providing more steadiness compared to regular heatsinks using snap closure.

The Walton Chaintech lab test results showed that the temperature of APOGEE GT DDR3 1800 memory module before using the Cool It Smart heatsink was 73°C. After using the Cool It Smart heatsink system, the module temperature had dropped to 52°C, which shows an apparent 21 degrees decrease. Additionally, when the optional dual fans were added on top of the heatsink block, the running memory modules’ temperature had reduced to as low as 38°C, very close to the room temperature as of 23°C.

This Cool It Smart heatsink system is made of light-weight aluminum for optimizing the cooling performance; besides, the system can easily become a durable platform to add optional cooling fans or water cooling parts for dramatic heat reduction. For enthusiast users, more “DIY” fun can be created by using this heatsink system to customize their own ones. The APOGEE Cool It Smart heatsink design by Walton Chaintech is now patent pending.


APOGEE GT DDR3 memory module has been tested to reach DDR3 1800 with substantial O/C (overclocking) capability and aggressive latencies. Balanced between bandwidth and latencies, APOGEE GT DDR3 1800 memory modules are rated to run CL8-8-8-24 and enable the latest Intel platforms to the highest level ever. The overall performance is well enhanced when it is used with Cool-it-Smart heatsink design and the memory stability is therefore increased at least 20 percent.